Thermoelectric heat exchanger

ABSTRACT

A method for producing an electric and mechanically serial arrangement in a thermoelectric heat exchanger for temperature-controlling a fluid may include providing an electrically conductive strip. The method may also include providing the strip with a Peltier element including a plurality of p-doped p-semiconductors and a plurality of n-doped n-semiconductors so as to alternate with one another along the strip. Providing the strip with the Peltier element may include electrically contacting the plurality of p-doped p-semiconductors and the plurality of n-doped n-semiconductors by a connecting structure including a plurality of connecting elements. The method may further include arranging the plurality of connecting elements between the plurality of p-doped p-semiconductors and the plurality of n-doped n-semiconductors such that a respective connecting element of the plurality of connecting elements alternates with each of the the plurality of p-doped p-semiconductors and the plurality of n-doped n-semiconductors.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to International Patent Application No.PCT/EP2016/066136, filed on Jul. 7, 2016, and German Patent ApplicationNo. DE 10 2015 213 294.3, filed on Jul. 15, 2015, the contents of bothof which are hereby incorporated by reference in their entirety.

TECHNICAL FIELD

The present invention relates to a thermoelectric heat exchanger fortemperature-controlling a fluid, in particular for a motor vehiclehaving a Peltier element. The invention, furthermore, relates to such aPeltier element.

BACKGROUND

For temperature-controlling fluids, in particular gases, heat exchangersare usually employed. Such heat exchangers allow heating and/or coolingthe fluid. For this purpose, such heat exchangers can comprisetemperature-control elements.

It is known to provide as such temperature-control elements electricallydissipative heating elements, which generate heat when an electriccurrent flows through them. Such a heating element is known from WO92/06570 A. Here, the heating element is designed as a cold conductor ora positive temperature coefficient heating element (PTC heating element)and is employed for heating an air flow.

Disadvantageous with such dissipative heating elements is that, inparticular with no electrical resources available, they do not allowadequate heating and/or consume excessive resources.

From the prior art it is also known to employ temperature-controlelements for temperature-controlling a fluid. The use of such athermoelectric heating element in a heat exchanger is known from DE 102009 058 673 A1 and EP 2 518 424 A1. Here, a Peltier element is employedin each case, which by way of a suitable connection and application ofan electric voltage has a cold side and a warm side. Apart from the heattransfer between the fluid and another fluid brought about by thetemperature difference, a corresponding arrangement of the Peltierelement allows realising a heat transfer achieved by way of the Peltierelement, so that the total heat transfer is increased. Such Peltierelements have a multiplicity of differently doped semiconductors, whichare connected to one another. In order to avoid a short circuit betweenthe semiconductors, the semiconductors are electrically insulated onboth sides by an electrically insulating coating and/or an electricallyinsulating plate. Such an electrical insulation regularly represents athermal barrier which worsens a thermal exchange of the Peltier element.Since the electrical insulations, furthermore, are arranged on the sidesof the Peltier element which in heat flow direction are locatedopposite, the heat exchange between the Peltier element and the fluid tobe temperature-controlled and/or the other fluid or object is renderedmore difficult.

In addition, such Peltier elements are designed rigid. During theoperation of the Peltier element, a temperature difference occurs withinthe Peltier element, which leads to thermal stresses within the Peltierelement. These thermal stresses can lead to a damage of the electricalinsulation of the Peltier element and/or of the electrical connectionsbetween the semiconductors and/or short circuits, which can negativelyaffect the function of the Peltier element and in particular lead to thefailure of the Peltier element.

SUMMARY

The present invention therefore deals with the problem of stating animproved or at least another embodiment for a thermoelectric heatexchanger comprising a Peltier element for temperature-controlling afluid and for such a Peltier element, which is characterized inparticular by an improved efficiency and/or resistance.

According to the invention, this problem is solved through the subjectsof the independent claim(s). Advantageous embodiments are subject of thedependent claims.

With a thermoelectric heat exchanger, the present invention is based onthe general idea of employing a Peltier element for the heat exchangebetween a fluid flowing through a flow space and a transfer space andarrange conductors for electrically connecting semiconductors of thePeltier element in at least one of the spaces, i.e. in the flow spaceand/or in the transfer space. Accordingly, the conductor arranged in theflow space is in particular exposed directly to the flowing fluid or theconductor arranged in the transfer space is involved in particulardirectly in the heat exchange with the transfer space. Through thearrangement of the conductors in the flow space or in the transfer spacean improved heat exchange occurs between the Peltier element and thefluid or between the Peltier element and the transfer space. Theconsequence is an improved efficiency of the heat exchanger. Inaddition, arranging the conductors in the flow space or in the transferspace results in an improved movability of the Peltier element so thatthermal stresses in particular can be better removed, thus resulting inan improved resistance of the heat exchanger.

According to the inventive idea, the heat exchanger thus comprises thethrough-flow space through which the fluid to be temperature-controlledcan flow and the transfer space, which is fluidically separated from theflow space. During the operation, the transfer space serves for the heattransfer or the heat exchange with the Peltier element, which in turnexchanges heat with the flow space or the fluid flowing through the flowspace. This results in a heat exchange between the transfer space andthe fluid flowing through the flow space that is correspondinglyintensified by the Peltier element. The Peltier element comprises amultiplicity of said semiconductors, wherein p-doped p-semiconductorsand n-doped n-semiconductors are alternately arranged. The electricalconnection of the semiconductors and thus said conductors are realisedas a connecting structure. The connecting structure comprises connectingelements which in each case electrically connect two suchsemiconductors. In addition, the semiconductors and the connectingelements are mechanically connected to one another. The semiconductorsand the connecting elements and thus the semiconductors and theconnecting structure in this case form a mechanical and electricalseries arrangement, in which in each case such a connecting element andsuch a semiconductor are alternately arranged.

The serial mechanical and electrical arrangement is realised inparticular in such a manner that such a connecting element connects twoconsecutive semiconductors of the Peltier element both mechanically andalso electrically. This means that along the arrangement, such ap-semiconductor, such a connecting element, such an n-semiconductor,such a connecting element, such a p-semiconductor etc. are arranged.

Furthermore, with the heat exchanger according to the invention, asimple integration of the Peltier element or of the arrangement in theheat exchanger is possible. In particular it is possible to arrange thePeltier element in the heat exchanger in particular before any joiningmethod step may be necessary for producing the heat exchanger, inparticular before a soldering of the heat exchanger. Because of this,the effort for producing the heat exchanger can be reduced and thus themanufacturing costs lowered. Because of the solution according to theinvention, electrically insulating coatings, in particular electricallyinsulating sheets, for example ceramic sheets for electricallyinsulating the Peltier element can be omitted, so that the number of thecomponents of the heat exchanger or of the Peltier elements are reducedand the production simplified. This also reduces the weight of thePeltier element and thus of the heat exchanger.

In advantageous embodiments, the serial arrangement is formed as aprefabricated assembly unit that can be inserted or mounted in the heatexchanger. Because of this, the production effort of the heat exchangercan be substantially reduced. In addition, other production steps forproducing the heat exchanger can take place independently of thearrangement and thus of the Peltier element. Because of this, the heatexchanger can be produced in multiple variations and/or morecost-effectively. The arrangement formed as prefabricated assembly unitis configured in such a manner that the semiconductors can be insertedor mounted in the heat exchanger jointly with the connecting elementsand thus with the connecting structure.

The fluidic separation between the flow space and the transfer space cangenerally be realised in any way.

For fluidically separating the flow space from the transfer space, aseparating structure is preferentially employed which comprises multipleseparating elements. Here, the separating structure is advantageouslyconfigured in such a manner that it thermally separates the flow spaceand the transfer space in addition to the fluidic separation. Theseparating elements can be produced in particular from materials havinglow thermal conductivity, for example from plastic. Practically, theseparating elements are produced from an electrically non-conductivematerial.

It is conceivable that the separating elements run between adjacentsemiconductors. In this case, the semiconductors together with theseparating elements can form the separating structure. Here it isadvantageous when the semiconductors are arranged between flow space andtransfer space.

Advantageous embodiments provide that apart from the connecting elementsand the semiconductors, the assembly unit also comprises the separatingelements. This means that apart from the serial arrangement, theassembly unit can also comprise the separating structure. Because ofthis, the production of the heat exchanger is further simplified and theassembly effort in particular further reduced.

Advantageously, the fluid to be temperature-controlled flowing throughthe flow space is electrically non-conductive. To this end, the fluid tobe temperature-controlled should not exceed a predetermined humidityproportion in particular when it is gaseous, for example air to betemperature-controlled. For limiting the humidity of the fluid it isconceivable to equip the heat exchanger with a dehumidification device,which dehumidifies the fluid upstream of the Peltier element.

Obviously, a liquid fluid can also be temperature-controlled with theheat exchanger according to the invention. Such temperature-control ispossible in particular when the liquid is electrically non-conductive ordoes not exceed a predetermined electric conductivity.

Preferred embodiments provide that the connecting elements are designedas identical parts. Because of this, the production effort of thePeltier element and thus of the heat exchanger can be reduced and/or thePeltier element or the heat exchanger produced more cost-effectively.

The heat exchanger according to the invention can be employed in anyapplication for temperature-controlling such a fluid. It is conceivable,in particular, to employ the heat exchanger in a motor vehicle in orderto temperature-control such a fluid flowing through the motor vehicle.In particular, the heat exchanger can be employed as heater, inparticular auxiliary heater, for temperature-controlling such a fluid.Here, the fluid can in particular be air which is fed to an interior ofthe motor vehicle. Consequently, the heat exchanger in this case isemployed as an air conditioning device of the motor vehicle or as partof such an air conditioning device.

The heat exchange in the transfer space with the Peltier element cantake place with a further second fluid, which is described astemperature-control fluid in the following. Here, thetemperature-control fluid can flow through the transfer space and canaccordingly be described as second flow space. Here, the at least oneconnecting element arranged in the temperature-control space can bedirectly exposed to the temperature-control fluid. Thetemperature-control fluid is preferentially a fluid other than the fluidflowing through the flow space. The temperature fluid in this case canbe a gas or a liquid.

When using the heat exchanger in a motor vehicle, thetemperature-control fluid can be in particular cooling water of themotor vehicle.

It is preferred when at least one such connecting element, which isarranged in the flow space, can be flowed through by the fluid. Becauseof this, an enlargement of the area of the connecting element exchangingheat with the fluid and thus an improved heat exchange and consequentlyan improved efficiency of the heat exchanger materialises.

The same applies to such a connecting element arranged in thetemperature-control space or in the second flow space through whichtemperature-control fluid can preferentially flow, in order to enlargethe area exchanging heat with the temperature-control fluid and thuscontribute to an improved efficiency of the heat exchanger.

The heat exchange of the Peltier element with the transfer space canfurthermore take place with a solid body arranged in the transfer space.Here it is preferred when at least one such connecting element isconnected to the solid body in a heat-transferring manner.

It is advantageous when at least one such connecting element lies flatagainst the solid body. Because of this, an enlargement of theheat-exchanging area between the connecting element and the solid bodyand/or an improved degree of heat exchange between the connectingelement and the solid body materialises, so that the heat exchangebetween the solid body and the connecting element is increased and theefficiency of the heat exchanger improved.

Thus, the solid body can serve as a heat source or heat sink, from whichthe Peltier element draws heat or to which the Peltier element suppliesheat.

The solid body can generally be designed in any way provided a heatexchange between the solid body and the at least one connecting elementis possible.

It is conceivable, for example, to employ electrically insulating solidbodies. Because of this, no short circuit between the connectingelements or the semiconductors occurs so that an operation of thePeltier element is not negatively affected.

It is also conceivable to employ an electrically conductive solid bodyand insulate the same electrically by suitable means in such a mannerthat a short circuit between the connecting elements or thesemiconductors is prevented. Such a means can in particular be anelectrically insulating coating, with which the solid body is providedin particular on the outside for electrically insulating at least twosuch connecting elements.

Preferred embodiments provide that the surface of a connecting elementlying flat against the solid body facing away from the solid body isthermally separated relative to the flow space by at least one suchseparating element. Because of this, a direct heat exchange between thisconnecting element and the flow space is prevented or at least reduced.As a consequence, an improved heat exchange of the connecting elementand accordingly of the Peltier element with the solid body andconsequently an improved efficiency of the heat exchanger materialises.

In principle, the solid body can be designed in any way. It isconceivable, in particular, that the solid body is solid.

It is also conceivable to form the solid body as a hollow body. In sucha case, the solid body can be flowed through, wherein the through-flowcontributes to the temperature-control of the hollow body. It isconceivable, in particular, that the solid body can be flowed through bythe temperature-control fluid. In this case, the solid body is thusformed in particular as a tube or tube section for thetemperature-control fluid.

It is preferred when at least one such connecting element,advantageously all connecting elements, are formed as heat exchangeelements for the direct heat exchange with the fluid, thetemperature-control fluid or the solid body. This means that theconnecting elements in particular do not have any thermally insulatingcoating and such like, which form a thermal barrier for the heatexchange with the connecting element.

In principle, the respective connecting element can be connected to theassociated semiconductors in any way.

Advantageous versions provide for at least one such connecting elementlying flat against at least one of the associated semiconductors.Because of this, a heat-exchanging area between the connecting elementand the at least one associated semiconductor is enlarged and theefficiency of the heat exchanger thus increased.

In preferred embodiments, at least one such connecting element is formedelastically for offsetting thermal stresses. The elastic design of theconnecting element can be realised through a suitable material selectionof the connecting element and/or by a suitable shape of the connectingelement.

It is conceivable, in particular, to produce at least one suchconnecting element from a sheet metal and thus realise the same as asheet-metal part. This makes possible a simple and cost-effectiveproduction of the Peltier element.

It is conceivable, in particular, to form at least one such connectingelement as a fin projecting into the flow space or into the transferspace. Because of this, the heat exchange between the connecting elementand the fluid or between the connecting element and thetemperature-control fluid is improved and the efficiency of the heatexchanger thus increased.

The serial arrangement is preferentially produced from an electricallyconductive strip, in particular from a sheet metal. The strip ispreferentially produced from an electrically conductive material, forexample from aluminium. Here, the strip can be initially provided inparticular as a continuous strip and subsequently provided alternatelywith p-semiconductors and n-semiconductors, which are arranged along thestrip spaced from one another. In the process, said connecting elementsare created between the semiconductors. Providing the strip with thesemiconductors is advantageously effected in such a manner that thesemiconductors are connected to the strip. Here, the semiconductors canbe directly attached to the strip. It is conceivable, in particular, tocoat the strip with the semiconductors. To this end, the semiconductorscan be applied to the strip during the course of a sputter-coating.

It is likewise conceivable to attach the semiconductors on a suitablesubstrate, which in turn are attached to the strip. For this purpose,any substrates can be employed on which the respective semiconductor canbe attached. Preferred are electrically conductive, in particularmetallic substrates. Conceivable, for example, are nickel-containingsubstrates, for example substrates on a nickel base. Applying thesemiconductors to the substrates can take place in any way. It isconceivable, in particular to coat the substrates with thesemiconductors. In particular, the semiconductors can be applied to thesubstrates by a sputter-coating. The use of substrates forms theadvantage that the provision with the semiconductors can take place in asimplified manner compared with the strip since the substrates inparticular have smaller dimensions than the strip. Additionally becauseof this, attention in terms of the application of the semiconductors hasto be saliently attached to the substrates. Because of this, the stripcan be produced from a more cost-effective material. The application ofthe semiconductors can also take place independently of the strip, forexample under suitable thermodynamic conditions, i.e. also at lowpressures and/or under a protective atmosphere and/or in a room withlittle dirt, in particular in a clean room.

Applying the semiconductors to the substrates is preferentially effectedprior to applying the substrate to the strip. This means that substratesprovided with such semiconductors are attached to the strip.

The substrates can be attached to the strip in any way. Conceivable arethermally bonded and/or form-fit connections, in particular versionswith which the substrate is glued, soldered, welded, clamped, crimped orbrazed to the strip. Here, the substrates and the strip can be suitablyconnected electrically for connecting the semiconductors. It is alsoconceivable to electrically contact the semiconductors directly with thestrip.

For realising the electrical serial arrangement of the semiconductors, asuitable electrical interruption of the strip can take place. To thisend, the strip can be initially provided with recesses or interruptionsin which the semiconductors or the corresponding substrates are thenprovided. The semiconductors can thus be provided in particular in theelectrical interruptions of the strip.

It is to be understood that the respective semiconductor cannot onlycomprise a single semiconductor element but also multiple equally dopedsemiconductor elements.

Once the strip has been provided with the semiconductors, the strip canbe cut to a desired length in order to obtain the serial arrangement ina desired length. Obviously, cutting the strip to the desired length canalso take place before providing the strip with the semiconductors.

The arrangement can have any shape. In particular, the connectingstructure and thus the connecting elements can have any shape.

Here it is conceivable to form the strip in accordance with the desiredshape of the arrangement. Forming the strip in this case can take placeprior to providing the strip with the semiconductors or after providingthe strip with the semiconductors. It is also conceivable to form thestrip partly before the provision with the semiconductors and partlyafter the provision with the semiconductors. Forming takes place forexample by punching and/or gathering.

Further important features and advantages of the invention are obtainedfrom the subclaims, from the drawings and from the associated figuredescription by way of the drawings.

It is to be understood that the features mentioned above and still to beexplained in the following cannot only be used in the respectivecombination stated but also in other combinations or by themselveswithout leaving the scope of the present invention.

Preferred exemplary embodiments of the invention are shown in thedrawings and are explained in more detail in the following descriptionwherein same reference characters relate to same or similar orfunctionally same components.

BRIEF DESCRIPTION OF THE DRAWINGS

It shows, in each case schematically,

FIG. 1 a section through a thermoelectric heat exchanger of a motorvehicle,

FIG. 2 the section from FIG. 1 with another exemplary embodiment of theheat exchanger,

FIG. 3 the section from FIG. 2 with a further exemplary embodiment ofthe heat exchanger,

FIGS. 4 to 8 in each case different exemplary embodiments of a Peltierelement of a heat exchanger,

FIG. 9 a method step during the production of an arrangement of the heatexchanger,

FIG. 10 the step from FIG. 9 with another exemplary embodiment,

FIG. 11 a lateral view of the arrangement,

FIGS. 12 to 14 view from FIGS. 4 to 8 each with a further exemplaryembodiment.

DETAILED DESCRIPTION

FIG. 1 shows a thermoelectric heat exchanger 1 of a motor vehicle 2which is not otherwise shown. The heat exchanger 1 comprises a flowspace 3 and a transfer space 4, which substantially extend parallel. Theflow space 3 can be flowed through by a fluid to betemperature-controlled, while the transfer space 4 can be flowed throughby another fluid, which in the following is described astemperature-control fluid. In addition, the heat exchanger 1 comprises aPeltier element 5 which, along the flow space 3 or the transfer space 4comprises a multiplicity of alternately arranged p-dopedp-semiconductors 6 and n-doped n-semiconductors 7. The semiconductors 6,7 are electrically contacted to one another by means of a connectingstructure 8 and connected in series. To this end, the connectingstructure 8 comprises a multiplicity of electrically conductive elements9, wherein the respective connecting element 9 electrically contactssuch a p-semiconductor 6 with the adjacent n-semiconductor 7. Aseparating structure 10 separates the flow space 3 and the transferspace 4 fluidically and thermally. To this end, the separating structure10 comprises electrically insulating separating elements 11, which runbetween the adjacent semiconductors 6, 7. The semiconductors 6, 7 inthis case are arranged between the flow space 3 and the transfer space 4so that together with the separating elements 11 they form theseparating structure 10.

Along the flow space or the transfer space 4, such a connecting element9 is alternately arranged in the flow space 3 and in the transfer spacerespectively. Because of this, the connecting elements 9 are directlyexposed to the flow of the fluid in the flow space 3 or the flow of thetemperature-control fluid in the transfer space 4. Because of this, adirect heat exchange of the connecting elements 9 with the fluid or thetemperature-control fluid occurs. This means that the connectingelements 9 or the connecting structure 8 serve both for the electricalconnection between the semiconductors 6, 7 and are also employed for theheat exchange. This substantially improves the efficiency of the heatexchanger 1.

The connecting elements 9 and the semiconductors 6, 7 in this case forma serial arrangement 12, in which in each case such a connecting element9 and such a semiconductor 6, 7 are alternately arranged and connectedboth electrically and also mechanically to one another. Here, thearrangement 12 is formed as an assembly unit 13 which as such can beinserted or mounted in the heat exchanger. This means that thearrangement 12 is realised as an assembly unit 13 comprising theconnecting elements 9 or the connecting structure 8 and thesemiconductors 6, 7, which can be separately mounted in the heatexchanger 1. When mounting the assembly unit 13 in the heat exchanger 1,the assembly unit 13 is mechanically and/or electrically connected tothe heat exchanger in the process. It is also conceivable that theseparating structure 10, i.e. in particular also the separating elements11, belong to the assembly unit 13.

The flow space 3 and the transfer space 4 are delimited by a wall 14 onthe side located opposite the separating elements 11.

When applying an electric voltage to the Peltier element 5, for exampleby way of a voltage source 15 and electrical cables 16, a firsttemperature side 17, which in the shown example faces the flow space 3and which is arranged in the flow space 3, and a second temperature side18, which in the shown example faces the transfer space 4 and which isarranged in the transfer space 4, are created on the Peltier element 5due to the Peltier effect. By suitably selecting the applied voltage,the first temperature side 17 can have a higher temperature than thesecond temperature side 18 or vice versa. In the shown example, thevoltage is applied in such a manner that the first temperature side 17has a higher temperature than the second temperature side 18. The firsttemperature side 18 is thus a warm side 19 of the Peltier element, whilethe second temperature side 18 is a cold side 20 of the Peltier element5. Accordingly, heat is fed to the fluid flowing through the flow space3 while heat is extracted from the temperature-control fluid flowingthrough the transfer space 4 and the temperature-control fluid is thuscooled. Here, the Peltier effect ensures that the heat transferred fromthe temperature-control fluid to the fluid flowing through the flowspace 3 is greater than with a direct heat transfer.

The connecting elements 9 are produced from a sheet metal, in particularaluminium sheet metal, and are formed elastically for offsetting thermalstresses. This means that thermal stresses within the Peltier element 5can be offset by a suitable deformation of the elastically formedconnecting elements 9.

The respective connecting element 9 comprises legs 21 projecting fromthe associated semiconductors 6, 7 in opposite directions and a base 22connecting the legs 21 on the side located opposite the associatedsemiconductors 6, 7. Here, the connecting elements 9 arranged in theflow space 3 can be flowed through by the fluid flowing through the flowspace 3. Because of this, an improved heat exchange between theconnecting elements 9 and the fluid occurs. Similar applies to theconnecting elements 9 arranged in the transfer space 4, which can beflowed through by the temperature-control fluid and thus make availablean enlarged area for the heat exchange with the temperature-controlfluid. In FIG. 1 it is evident, furthermore, that all connectingelements 9, i.e. both the connecting elements 9 arranged in the flowspace 3 and also the connecting elements 9 arranged in the transferspace 4 are designed as identical parts.

In FIG. 2, another exemplary embodiment of the heat exchanger 1 isshown. In contrast with the exemplary embodiment shown in FIG. 1, asolid body 23 is arranged in the transfer space 4 in FIG. 2, whichexchanges heat with the Peltier element 5. Here, the connecting elements9 arranged in the transfer space 4 are in heat-exchanging contact withthe solid body 24. To this end, the connecting elements 9 in the shownexample lie flat against the solid body 23 with their bases 22. In therepresentation, the connecting elements 9 are arranged spaced from thesolid body 23 for the sake of clarity. Because of this, an improved heatexchange between the solid body 23 and the connecting elements 9arranged in the transfer space 4 and thus an improved heat exchangebetween the solid body 23 and the Peltier element 5 occurs. In FIG. 2 itis evident that the connecting elements 9 arranged in the transfer space4 have smaller or shorter legs 21 than the connecting elements 9arranged in the flow space 3. In the shown example, the voltage isapplied so that the sides of the semiconductor 6, 7 facing the solidbody 23 are the cold side. Accordingly, heat is discharged from thesolid body during the operation of the heat exchanger 1 and fed to thefluid flowing through the flow space 3. In order to avoid a shortcircuit between the connecting elements 9 arranged in the transfer space4 the solid body 23 can be electrically insulating. It is alsoconceivable that the solid body 23 is electrically conductive and forthe electrical insulation relative to the connecting elements 9,comprises an electrically heating insulation coating that is not shown.As is evident in FIG. 2, furthermore, the surface of the connectingelements 9 lying flat against the solid body 23 facing away from thesolid body 23 is thermally separated relative to the flow space 3 ineach case by means of such a separating element 11. By way of this, athermal separation of the corresponding connecting elements 9 from theflow space preferably takes place as well in order to prevent or atleast reduce a direct heat exchange of the relevant connecting elements9 with the fluid flowing through the flow space 3.

The solid body 23 shown in FIG. 2 is embodied solid as indicated by thehatched representation. The solid body 23 of solid design can be a wallof a component to be temperature-controlled and which is not otherwiseshown, in particular of the motor vehicle 2.

In FIG. 3, another exemplary embodiment of the heat exchanger 1 isshown, which substantially differs from the exemplary embodiment shownin FIG. 2 in that the solid body 23 is designed as a hollow body 24. Thehollow body 24 in this case can be flowed through by thetemperature-control fluid and thus delimit a corresponding flow space 25for the temperature-control fluid, wherein this flow space 25 in thefollowing is described as second flow space 25. Thus, thetemperature-control fluid flows through the second flow space 25 as aresult of which the solid body 23 designed as hollow body 24 assumes acorresponding temperature. The solid body 23 thus heated or cooled is inheat-transferring contact with the Peltier element 5 via the connectingelements 9 arranged in the transfer space 4 in order totemperature-control the fluid flowing through the flow space 3. Thesolid body 23 designed as hollow body 24 can thus be in particular atube 26.

In FIGS. 4 to 8, different exemplary embodiments of the Peltier element5 or of the arrangement 12 are shown, wherein in each case such asemiconductor 6, 7 including connecting elements 9 is visible.

In the exemplary embodiment shown in FIG. 4, the semiconductor 6, 7 isarranged or attached with offset between the connecting elements 9. Inthe exemplary embodiment shown in FIG. 5, the semiconductor 6, 7 isintroduced or arranged between the connecting elements 9 without offset.

FIG. 6 shows an exemplary embodiment in which the semiconductor 6, 7 isattached between the connecting elements 9 without offset, wherein theconnecting elements 9 are directly connected to one another or formedcontinuously. Here, the connecting elements 9 can be formed inparticular in one piece, i.e. for example material-uniformly.

FIG. 7 shows an exemplary embodiment which substantially differs fromthe example shown in FIG. 6 in that the semiconductor 6, 7 is designedbent. In the shown example, the semiconductor 6, 7 in this case has asemi-circular cross section. A curvature radius of the semiconductor 6,7 is adapted to the relevant circumstances, in particular an improvedproduction.

FIG. 8 shows an exemplary embodiment in which the semiconductor 6, 7 isarranged between the connecting elements 9 without offset. Here, astabilisation element 27 for stabilising the connecting elements 9and/or for supporting the connecting elements 9 on the outside isadditionally attached to the connecting elements 9. The stabilisationelement 27 is preferentially electrically non-conductive, in particularelectrically insulating. The stabilisation element 27 can be designed asa non-conductive stabilisation coating 28 applied to the connectingelements 9.

FIG. 9 shows a step during a preferred production of the arrangement 12or of the Peltier element 5. Here, a strip 29, in particular acontinuous strip 30, in particular of aluminium, is initially provided.Along the strip 29, the strip 29 is alternately provided with such ap-semiconductor 6 and an n-semiconductor 7 in each case at predetermineddistances. Because of this, the connecting elements 9 are createdbetween the semiconductors 6, 7. In the exemplary embodiment shown inFIG. 9, the respective semiconductor 6, 7 comprises an associatedsemiconductor element 31, 32.

FIG. 10 shows an exemplary embodiment in which the strip 29 is providedwith such semiconductors 6, 7 which comprise multiple such semiconductorelements 31, 32 doped in the same manner. This means that the respectivep-semiconductor 6 comprises multiple p-doped p-semiconductor elements 31while the respective n-semiconductor 7 comprises multiple n-dopedn-semiconductor elements 32.

In both exemplary embodiments, cutting the strop 29 to a desired lengthcan take place. Here, cutting the strip 29 to the desired length cantake place prior to providing the strip with the semiconductor 6, 7 orafter providing the strip 29 with the semiconductors 6, 7.

FIG. 11 shows a further method step for producing the Peltier element 5for the arrangement 12, in which the strip 29 provided with thesemiconductors 6, 7 is formed into the desired shape. In FIG. 11, thisforming takes place in such a manner that the Peltier element 5 or thearrangement 12 of the heat exchanger 1 shown in FIG. 1 is created.Through a corresponding different arrangement of the semiconductors 6, 7and forming, the Peltier element 5 or the corresponding arrangement 12shown in FIGS. 2 and 3 can also be produced.

Here it is also conceivable to carry out the forming of the strip priorto providing the strip 29 with the semiconductors 6, 7.

The arrangements 12 shown in FIGS. 9 to 11 are such assembly units 13.Here it is conceivable to provide the respective arrangement 12 orassembly unit 13 with the separating structure 10 or the separatingelements 11 so that the assembly unit 13 also comprises the separatingstructure 12 or the separating elements 11.

Providing the strip with the semiconductors 6, 7 and forming the strip29 can likewise be effected in such a manner that the exemplaryembodiments shown in FIG. 4 to 8 are thereby created.

In the exemplary embodiments shown in FIGS. 4 to 8 and 9 and 10 thesemiconductors 6, 7 are directly applied to the strip 29 or theconnecting elements 9. This is effected for example by a suitablecoating of the strip 29 or of the connecting elements 9 with thesemiconductors 6, 7. For this purpose, a sputter-coating can be employedfor example.

FIGS. 12 to 14 show further exemplary embodiments in the case of whichthe semiconductors 6, 7 are applied to an associated substrate 33 whichis applied to the strip 29 or which is connected to the connectingelements 9. This means that the respective semiconductor 6, 7 is appliedto such an associated substrate 33 which is connected to the strip 29 orthe associated connecting elements 9. The substrate 33 consists of anelectrically conductive material. Here, the substrates 33 are initiallyprovided with the semiconductors 6, 7 and the substrates 33 providedwith the semiconductors 6, 7 subsequently applied to the strip 29 orconnected to the associated connecting elements 9, in particular glued,soldered, welded and the like. Providing the substrates 33 with thesemiconductors 6, 7 is effected by a coating of the substrates 33, inparticular by a sputter-coating.

Prior to being provided with the semiconductors 6, 7 or the substrates33, the strip 29 can be provided with electrical interruptions in orderto realise the electrical serial arrangement of the semiconductors 6, 7.To this end, the strip 29 can be provided with suitable recesses orgrooves which are not visible, in which the semiconductors 6, 7 or thesubstrates 33 are then provided, in particular introduced.

In FIG. 12 an exemplary embodiment is shown, in the case of which thesemiconductor 6, 7 substantially covers the substrate 33 in onedirection while the substrate 33 is larger than the semiconductor 6, 7perpendicularly thereto.

In FIG. 13, the substrate 33 is larger than the semiconductor 6, 7 inboth directions. In the exemplary embodiments shown in FIGS. 12 and 13,the substrates 33 cover the strip 29 or the connecting elements 9 in onedirection. In these examples, the substrate 33 can mechanically and/orelectrically connect the connecting elements 9 to one another.

In the exemplary embodiment shown in FIG. 14, the substrate 33 coversthe strip 29 or the connecting elements 9 merely partly. The substrate33 in this case is larger than the semiconductor 6, 7 in bothdirections.

1. A method for producing an electric and mechanically serialarrangement in a thermoelectric heat exchanger fortemperature-controlling a fluid, comprising: providing an electricallyconductive strip; and providing the strip with a Peltier elementincluding a plurality of p-doped p-semiconductors and a plurality ofn-doped n-semiconductors so as to alternate with one another along thestrip, wherein providing the strip with the Peltier element includeselectrically contacting the plurality of p-doped p-semiconductors andthe plurality of n-doped n-semiconductors by a connecting structureincluding a plurality of connecting elements, the plurality ofconnecting elements each electrically contacting a respective one of theplurality of p-doped p-semiconductors and a respective one of theplurality of n-doped n-semiconductors, and arranging the plurality ofconnecting elements between the plurality of p-doped p-semiconductorsand the plurality of n-doped n-semiconductors such that a respectiveconnecting element of the plurality of connecting elements alternateswith each of the the plurality of p-doped p-semiconductors and theplurality of n-doped n-semiconductors, wherein at least one of theplurality of connecting elements is arranged in at least one of a flowspace through which a fluid to be temperature controlled is flowable anda transfer space fludicially separated from the flow space.
 2. Themethod according to claim 1, further comprising cutting the strip to adesired length one of (i) following providing the strip with theplurality of p-doped p-semiconductors and the plurality of n-dopedn-semiconductors and (ii) prior to providing the strip with theplurality of p-doped p-semiconductors and the plurality of n-dopedn-semiconductors.
 3. The method according to claim 1, wherein providingthe strip includes forming the strip one of (i) after providing thestrip with the plurality of p-doped p-semiconductors and the pluralityof n-doped n-semiconductors and (ii) before providing the strip with theplurality of p-doped p-semiconductors and the plurality of n-dopedn-semiconductors.
 4. A thermoelectric heat exchanger fortemperature-controlling a fluid, comprising: a flow space through whicha fluid to be temperature-controlled is flowable; a transfer spacefluidically separated from the flow space; and a Peltier elementincluding a plurality of p-doped p-semiconductors and a plurality ofn-doped n-semiconductors arranged in an alternating relationship withone another, the plurality of p-doped p-semiconductors and the pluralityof n-doped n-semiconductors electrically contacted by a connectingstructure including a plurality of connecting elements, the plurality ofconnecting elements each electrically contacting a respectivep-semiconductor of the plurality of p-doped p-semiconductors and arespective n-semiconductor of the plurality of n-doped n-semiconductors;wherein at least one of the plurality of connecting elements is arrangedin at least one of the flow space and the transfer space; and whereinthe plurality of p-doped p-semiconductors, the plurality of n-dopedn-semiconductors and the plurality of connecting elements form anelectrical and mechanical serial arrangement such that one of theplurality of connecting elements is arranged between each of theplurality of p-doped p-semiconductors and the plurality of n-dopedn-semiconductors.
 5. The heat exchanger according to claim 4, whereinthe arrangement is structured as a prefabricated assembly unit.
 6. Theheat exchanger according to claim 4, further comprising a separatingstructure including a plurality of separating elements, the separatingstructure fluidically and thermally separating the flow space and thetransfer space.
 7. The heat exchanger according to claim 6, wherein theplurality of p-doped p-semiconductors and the n-doped n-semiconductorstogether with the plurality of separating elements provide theseparating structure.
 8. The heat exchanger according to claim 6,wherein the arrangement is structured as a prefabricated unit, theassembly unit including the plurality of separating elements.
 9. Theheat exchanger according to claim 4, wherein a temperature-control fluidis flowable through the transfer space such that the temperature-controlfluid exchanges heat with the Peltier element.
 10. The heat exchangeraccording to claim 4, further comprising a solid body arranged in thetransfer space configured to exchange heat with the Peltier element. 11.The heat exchanger according to claim 10, wherein at least one of theplurality of connecting elements lies flat against the solid body. 12.The heat exchanger according to claim 10, wherein at least one of: thesolid body is electrically insulating; and the solid body includes anelectrically insulating coating.
 13. The heat exchanger according toclaim 11, wherein a surface facing away from the solid body of the atleast one connecting element that lies flat against the solid body isthermally separated relative to the flow space by at least one of theplurality of separating elements.
 14. The heat exchanger according toclaim 10, wherein one of: the solid body is solid; and the solid body isstructured as a hollow body through which the temperature-control fluidis flowable.
 15. The heat exchanger according to claim 4, wherein atleast one of the plurality of connecting elements is structuredelastically for offsetting thermal stresses.
 16. The heat exchangeraccording to claim 6, wherein a temperature-control fluid is flowablethrough the transfer space such that the temperature-control fluidexchanges heat with the Peltier element.
 17. The heat exchangeraccording to claim 16, further comprising a solid body arranged in thetransfer space configured to exchange heat with the Peltier element. 18.The heat exchanger according to claim 6, further comprising a solid bodyarranged in the transfer space configured to exchange heat with thePeltier element.
 19. The heat exchanger according to claim 18, whereinat least one of the plurality of connecting elements lies flat againstthe solid body.
 20. The heat exchanger according to claim 19, wherein asurface facing away from the solid body of the at least one connectingelement that lies flat against the solid body is thermally separatedrelative to the flow space by at least one of the plurality ofseparating elements.